| PART |
Description |
Maker |
| TISP61089A |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Power Innovations Ltd
Power Innovations Limited
Power Innovations International, Inc.
|
| TISP61089AD TISP61089ASD TISP61089D TISP61089SD |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Bourns Electronic Solutions
|
| TISP61089S TISP61089SD TISP61089SDR |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Power Innovations Ltd
Power Innovations Limited
|
| TISPPBL2P TISPPBL2D TISPPBL1P TISPPBL1D |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS 双远期导电的P -门晶闸管爱立信成分SLIC组件
|
Mospec Semiconductor, Corp.
Power Innovations International, Inc.
Power Innovations Limited
POINN[Power Innovations Ltd]
|
| TISPPBL2P TISPPBL2D TISPPBL1P TISPPBL1D |
TELECOM, SURGE PROTECTION CIRCUIT, PDIP8
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS
|
BOURNS INC
BOURNS[Bourns Electronic Solutions]
|
| TISP61089QB TISP61089QBDR-S TISP61089QB12 |
PROGRAMMABLE OVERVOLTAGE PROTECTOR QUAD FORWARD-CONDUCTING P-GATE THYRISTOR
|
Bourns Electronic Solutions
|
| TISP5110H3BJ TISP5115H3BJ TISP5190H3BJ |
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR
|
TY Semiconductor Co., Ltd
TY Semiconductor Co., L...
|
| Q60103-Y32-E Q60103-Y32-F Q60103-Y23-F Q60103-Y23- |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes PNP晶体管为自动输入
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
PNP TRANSISTORS FOR AF INPUT STAGES
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 5SHX06F6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| 74ABT20D-T 74ABT20DB118 |
Dual 4-input NAND gate - Description: Dual 4-Input NAND Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -15/ 20 mA ; Propagation delay: 2.7 ns; Voltage: 4.5-5.5 V ABT SERIES, DUAL 4-INPUT NAND GATE, PDSO14
|
Ecliptek, Corp.
NXP SEMICONDUCTORS
|
